Coaxial GaN/InGaN/GaN Nano-Heterostructures
نویسنده
چکیده
The optimization of the epitaxial quality and ordering of coaxial GaN/InGaN/GaN nanoheterostructures is the main focus of this study. Two approaches for the realization of upright ZnO nanipillars, used as templates for the epitaxially grown GaN layers, with their respective degrees of pattern arrangement are introduced. Consequently, the growth of coaxial GaN/InGaN/GaN quantum wells (for three different samples) along with the corresponding structural and optical properties is investigated. By comparing the optimized InGaN quantum well growth conditions in two different MOCVD reactors, we could reduce the FWHM of an intense room temperature photoluminescence peak of the InGaN quantum well at 3 eV from 300meV to 190meV. Cathodoluminescence mapping along the nanotubes revealed two main peaks that are emerging from the sides and top facets of the tubes backing an argument for different respective In incorporation.
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